MRAM is a storage technology that uses electronic spin to store information. MRAM has the potential to be a general-purpose memory that combines the density of storage memory with the speed of SRAM, while being nonvolatile and energy efficient. MRAM is resistant to high radiation, can operate in extreme temperature conditions, and is tamper-proof. This makes MRAM suitable for automotive, industrial, military, and space applications.
EverSpin non-volatile 256KB serial MRAM MR25H256ACDF is described below.
MR25H256ACDF is a serial port MRAM, memory array logic organized into 32KX8, using the Serial Peripheral Interface (SPI) Chip Selection (CS), Serial Input (SI), Serial Output (SO) and Serial Clock (SCK) four pin interface bus. Serial MRAM implements a subset of commands common to SPIEEEPROM and flash memory components today, allowing the MRAM to replace these components in the same slot and interoperate on a shared SPI bus. Serial MRAM offers superior write speed, unlimited durability, low standby and operating power, and more reliable data retention compared to available serial memory alternatives. MR25H256ACDF has been released for mass production and is recommended for all new designs. Consult EverSpin agents for more information about our products and provide technical support to our clients.
MR25H256ACDF Features • No write delay • Unlimited write durability • Data retention over 20 years • Automatic data protection in case of power failure • Block write protection • Fast and simple SPI interface Cclock rates up to 40MHz • Power range from 2.7 to 3.6 volts • Low current sleep mode • Industrial and automotive level 1 and 3 temperatures • Available in 8-DFN or 8-DFN SmallFlagroHS compatible packages. • Direct replacement of serial EEPROM, flash memory, and FERAM • Industrial and AEC-Q1001 and Level 3 options • Humidity sensitivity MSL-3
Electrical Specifications The device contains circuits to protect the input from damage by high static voltages or electric fields; However, normal precautions are recommended to avoid applying any voltage above the maximum rated voltage to these high impedance (HI-Z) circuits.
The device also includes protection against external magnetic fields. Precautions shall be taken to avoid the application of any magnetic field stronger than that specified in the maximum rating.