With nearly 40 years of experience in discrete memory semiconductors, Cypress leads the industry with best-in-class memory products, solutions and technologies. The first random-access memory was introduced in 1982, and from this auspicious beginning has grown to a wide range of products covering NOR flash, PSRAM, SRAM, NVSRAM and FRAM, with densities ranging from 4Kbit to 4Gbit. Cypress Volatility and Non-Volatility Memory product portfolio has the following characteristics: ultra low power consumption, high performance, reliable RAM products. Cypress agent can provide product related technical support.
The FM25V01A-G is a 128Kbit non-volatile memory using advanced ferroelectric process. FRAM is non-volatile; Like RAM, it can perform read and write operations. It provides 151 years of reliable data retention time and solves the complexity, overhead, and system-level reliability problems caused by serial flash memory, EEPROM, and other non-volatile memory.
Unlike serial flash memory and EEPROM, the FM25V01A-G performs write operations at bus speed. And it does not cause any write delay. After each byte is successfully transferred to the device, the data is immediately written to the memory array. Execution of the next bus cycle can begin at this point without polling data. Compared with other non-volatile memory, this product provides more erasure times. The FM25V01A-G can support 1014 read/write cycles, or 100 million more write cycles than an EEPROM.
Because of these characteristics, the FM25V01A-G is suitable for non-volatile memory applications that require frequent or fast writes. Applications range from data acquisition (where the number of write cycles is important) to demanding industrial control (where long write times of serial flash or EEPROM can cause data loss).
As a hardware replacement, the FM25V01A-G provides a great deal of convenience to users of serial EEPROM or flash memory. The FM25V01A-G uses a high-speed SPI bus to improve the high-speed write capability of the RAM technology. The device contains a read-only device ID by which the host can determine the manufacturer, product capacity, and product version. The device specification is guaranteed in the industrial temperature range of — 40 ° C to +85 ° C.
■128Kbit ferroelectric RAM is logically organized with 16K×8 ❐ High durability: 100 trillion (1014) read/write ❐ With 151 years of data retention time (refer to the data retention time and durability table) ❐NoDelay™ write ❐ With advanced, highly reliable Ferric technology – very fast SPI ❐ with a operating frequency up to 40MHz ❐ Serial-flash and EEPROM hardware direct substitution ❐ Supports SPI mode 0 (0,0) and mode 3 (1,1) -Precise write protected ❐ With a write – protected (WP) pin, ❐ With a software protected ❐ With a write – discontinued instruction, ❐ With a software module protected ❐, Low-power ❐ With a frequency of 40MHz, effective current of 2.5mA ❐, 150mA ❐ With a sleep mode current of 8mA ■ Low operating voltage: VDD=2.0V to 3.6V ■ — 40 ° C to +85 ° C 8-pin Small Plastic-sealed Integrated Circuit (SOIC) Package
Distribution of pin
The FM25V01A-G is a serial RAM memory. The memory array is logically organized into 16,384 x 8 bits and can be accessed using an industry-standard Serial Peripheral Interface (SPI) bus. A FRAM performs the same functions as a serial flash memory and a serial EEPROM. The main difference between the FM25V01A-G and serial flash or EEPROM with the same pin distribution is that the FRAM has better write performance, high durability, and low power consumption.
Memory architecture When accessing FM25V01A-G, the user addresses every 8 bits of data in a 16K address. These 8 bits of data are moved in and out continuously. These addresses can be accessed using the SPI protocol, which contains a chip selection (used to support multiple devices on the bus), an opcode, and a two-byte address. The upper two bits of the address range are ‘no concern’ values. The 14-bit full address specifies the address of each byte independently.
Most of the functions of the FM25V01A-G can be controlled by an SPI interface or handled automatically via an on-board circuit. The access time to the memory is almost zero, which is less than the time required by the serial protocol. The memory therefore reads/writes at the speed of the SPI bus. Unlike serial flash or EEPROM, polling for a device’s ready condition is not required because write operations occur at bus speed. New bus data operations need to be written before they can be moved into the device.
Cypress Ferroelectric RAM(FRAM) memory provides the industry’s lowest power consumption for mission-critical nonvolatile memory cycling endurance by combining ultra-low-power operation with high-speed interfaces, instant nonvolatility, and unlimited read/write. This makes FRAM an ideal data recording memory for portable medical, wearable, IoT sensors, industrial and automotive applications.