EverSpin is a semiconductor technology company that was founded in 2006 as a spin-off from Freescale. EverSpin is a leader in the development of non-volatile MRAM memory chips. EverSpin is the only company in the world that specializes in the manufacture and sale of magnetic random access memory (MRAM) products, which are used in a variety of industries. Such as artificial intelligence, financial data and so on.

EverSpin is a serial MRAM chip with a temperature range of -40 ° C to+85 ° C. EverSpin is an industrial grade memory chip that can be used in industrial applications, especially for applications with strict temperature requirements. The storage capacity is 1 MB (128Kx8), and the data bit width is 8 bits.

The MR25H10CDF provides serial EEPROM and serial flash compatible read/write timing with no write delay and unlimited read/write durability. Unlike other serial memory, both reads and writes can occur randomly in memory, and there is no delay between writes. The MR25H10 is an ideal memory solution for applications that quickly store and retrieve data and programs with a small number of I/O pins. The package is supplied in 5mmx6mm Small Flag 8-DFN. Both are compatible with serial EEPROM, FLASH and FERAM products.

The MR25H10CDF provides highly reliable data storage across a wide range of temperatures. The product is available in industrial (-40 ° C to +85 ° C) and AEC-Q100 (-40 ° C to +125 ° C) operating temperature ranges.

MR25H10CDF features • No write delay • Unlimited write endurance • Data retention over 20 years • Automatic data protection for power loss • Block write protection • Fast, simple SPI interface Top speed of 40MHz clock rate •2.7 to 3.6 volt power range • Low current sleep mode • Industrial temperature • Available in Small Fflag 8-DFN RoHS-compatible package • Direct replacement of serial EEPROM, FLASH, FERAM •AEC-Q100 Level 1 option

MRAM is a storage technology that uses electronic spin to store information. EverSpin MRAM has the potential to be universal memory, combining the density of memory with the speed of SRAM, while being nonvolatile and energy efficient. MRAM is resistant to high radiation, can operate in extreme temperature conditions, and is tamper-proof. This makes MRAM suitable for automotive, industrial, military, and space applications.