Over the past few decades, the SRAM field has been divided into two different product families, fast and low power, each with its own features, applications and price. Devices that use SRAM need its high speed or low power, but not both. But there is a growing need for high-performance devices with low power consumption to perform complex operations while running on portable power sources. This demand is driven by a new generation of medical devices and hand-held devices, consumer electronics and communication systems and industrial controllers, all of which are driven by the Internet of Things.
The following introduces a domestic SRAM chip EMI501HB08PM45I which is compatible with IS63WV1288DBLL-8TLI.
EMI501HB08PM45I asynchronous low power SRAM is manufactured by EMI’s advanced full CMOS process technology. Bit width 128K x 8bit, support industrial temperature range, working output voltage from 4.5V to 5.5V, to achieve the flexibility of the system design. Also supports low data retention current for battery backup operation with low data retention voltage.
EMI501HB08PM45i Characteristics • Process technology: 90nm full CMOS • Tissue: 128K x 8bit • Power supply voltage: 4.5V ~ 5.5V • Three state output and TTL compatible • Standard 32SOP. • Industrial operating temperature.
Low power SRAM memory is used in battery powered products which are very sensitive to power consumption. As a category of static random access memory, SRAM is widely embedded in high-performance microprocessors as the most important semiconductor memory. With the continuous improvement of IC manufacturing technology, memory occupies a larger proportion of chip power consumption, and the design of high speed and low power SRAM becomes more and more important.